Study of nitrogen ion implantation through Si3N4 layer for GaN on Si power HEMTs isolation process

This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN Si heterojunction structure. Employment of Si3N4 simplify HEMT fabrication process and helps to obtain high resistivity isolation due the shift implanted ions distribution towards surface semiconductor. in combination with C-doped heterostructure buffer results increased up 650 V breakdown voltage. Keywords: implantation, voltage, GaN, power transistor.